Band convergence and carrier-density fine-tuning as the electronic origin of high-average thermoelectric performance in Pb-doped GeTe-based alloys
Yamei Feng, Junqin Li, Yu Li, Teng Ding, Chunxiao Zhang, Chunxiao Zhang, Lipeng Hu, Fusheng Liu, Weiqin Ao, Chaohua Zhang, Chaohua Zhang
Abstract
High-average<italic>ZT</italic>is obtained in Pb-doped GeTe-based thermoelectric alloys due to the band convergence and fine tuning of carrier density.
Topics & Concepts
Thermoelectric effectDopingMaterials scienceConvergence (economics)Condensed matter physicsThermoelectric materialsCharge-carrier densityOptoelectronicsThermodynamicsPhysicsEconomicsEconomic growthAdvanced Thermoelectric Materials and DevicesChalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenides