Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient
Kensuke Sumida, Kazufumi Hirukawa, Hideki Sakurai, Kacper Sierakowski, Masahiro Horita, Michał Boćkowski, Tetsu Kachi, Jun Suda
Abstract
Abstract We performed an isothermal annealing study on Mg-implanted GaN at 1300 °C in an ultra-high-pressure (1 GPa) nitrogen ambient. Annealing for more than 30 min resulted in a high acceptor activation ratio and a low compensation ratio that were comparable to those obtained with annealing at 1400 °C for 5 min. We also performed annealing at 1300 °C in a reduced nitrogen pressure of 300 MPa which makes us possible to expand the inner diameter of annealing equipment in the future. High electrical activation, similar to one obtained by annealing at 1 GPa, was successfully obtained.
Topics & Concepts
Annealing (glass)Materials scienceNitrogenHigh pressureAnalytical Chemistry (journal)Isothermal processAcceptorMetallurgyChemistryEngineering physicsEnvironmental chemistryThermodynamicsCondensed matter physicsEngineeringOrganic chemistryPhysicsGaN-based semiconductor devices and materialsSemiconductor materials and devicesMetal and Thin Film Mechanics