Charge Transfer and Asymmetric Coupling of MoSe<sub>2</sub> Valleys to the Magnetic Order of CrSBr
Caique Serati de Brito, Paulo E. Faria, Talieh S. Ghiasi, Josep Ingla‐Aynés, Cesar Rabahi, Camila Cavalini, Florian Dirnberger, Samuel Mañas‐Valero, Kenji Watanabe, Takashi Taniguchi, Klaus Zollner, Jaroslav Fabian, Christian Schüller, Herre S. J. van der Zant, Y. Galvão Gobato
Abstract
van der Waals heterostructures composed of two-dimensional (2D) transition metal dichalcogenides and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in nonmagnetic TMDs. Here, we report magneto photoluminescence (PL) investigations of monolayer (ML) MoSe 2 on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under different magnetic field orientations. Our results reveal a clear influence of the CrSBr magnetic order on the optical properties of MoSe 2, such as an anomalous linear-polarization dependence, changes of the exciton/trion energies, a magnetic-field dependence of the PL intensities, and a valley g -factor with signatures of an asymmetric magnetic proximity interaction. Furthermore, first-principles calculations suggest that MoSe 2 /CrSBr forms a broken-gap (type-III) band alignment, facilitating charge transfer processes. The work establishes that antiferromagnetic–nonmagnetic interfaces can be used to control the valley and excitonic properties of TMDs, relevant for the development of opto-spintronics devices.