Quantum tunneling high-speed nano-excitonic modulator
Hyeongwoo Lee, Sujeong Kim, Seonhye Eom, Gangseon Ji, Soo Ho Choi, Huitae Joo, Jin‐Hyuk Bae, Ki Kang Kim, Vasily Kravtsov, Hyeong‐Ryeol Park, Kyoung‐Duck Park
Abstract
High-speed electrical control of nano-optoelectronic properties in two-dimensional semiconductors is a building block for the development of excitonic devices, allowing the seamless integration of nano-electronics and -photonics. Here, we demonstrate a high-speed electrical modulation of nanoscale exciton behaviors in a MoS2 monolayer at room temperature through a quantum tunneling nanoplasmonic cavity. Electrical control of tunneling electrons between Au tip and MoS2 monolayer facilitates the dynamic switching of neutral exciton- and trion-dominant states at the nanoscale. Through tip-induced spectroscopic analysis, we locally characterize the modified recombination dynamics, resulting in a significant change in the photoluminescence quantum yield. Furthermore, by obtaining a time-resolved second-order correlation function, we demonstrate that this electrically-driven nanoscale exciton-trion interconversion achieves a modulation frequency of up to 8 MHz. Our approach provides a versatile platform for dynamically manipulating nano-optoelectronic properties in the form of transformable excitonic quasiparticles, including valley polarization, recombination, and transport dynamics. High-speed electrical modulation of the excitonic properties of 2D semiconductors could promote their application for optoelectronic devices. Here, the authors report the dynamic switching of neutral exciton and trion-dominant states in a MoS2 monolayer via a quantum tunneling nanoplasmonic cavity, reaching modulation frequencies up to 8 MHz.