Ultra‐High‐Resolution Perovskite Quantum Dot Light‐Emitting Diodes
Chaomin Mao, Songman Ju, Jinping Zheng, Yueting Zheng, Zhongwei Xu, Lihua Lin, Hailong Hu, Kaiyu Yang, Tailiang Guo, Fushan Li
Abstract
Abstract Perovskite quantum dots (PQDs) have been widely used to realize light‐emitting diodes (LEDs) with high color purity, efficiency, and wide color gamut. Due to the demand for huge amount of display information, development on high‐resolution PQD LEDs (PQLEDs) with massive pixel density are highly desired. Herein, high‐resolution PQLEDs are fabricated by using nanoimprint technique. By preparing a honeycomb‐insulating polymer polymethyl methacrylate (PMMA) film, the high‐resolution pixelated quantum dot emissive layer is formed. In addition, the leakage current of the device is significantly reduced because the direct contact between electron transport layer and hole transport layer is avoided. The PQLEDs based on nanoimprint technology show a resolution of 9072 pixels per inch (PPI), and a maximum external quantum efficiency (EQE) and brightness of 7.81% and 146 400 cd m −2 , respectively. The results demonstrate that high‐resolution PQLEDs can be realized by using nanoimprint technology, holding great commercial potential for next‐generation near‐eye displays.