On-chip light control of semiconductor optoelectronic devices using integrated metasurfaces
Chenglong Zheng, Peinan Ni, Yiyang Xie, Patrice Genevet
Abstract
Semiconductor optoelectronics devices, capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed, which has profoundly reshaped the modern life with a wide range of applications. In recent decades, semiconductor technology has rapidly evolved from first-generation narrow bandgap materials (Si, Ge) to the latest fourth-generation ultra-wide bandgap semiconductor (GaO, diamond, AlN) with enhanced performance to meet growing demands. Additionally, merging semiconductor devices with other techniques, such as computer assisted design, state-of-the-art micro/nano fabrications, novel epitaxial growth, have significantly accelerated the development of semiconductor optoelectronics devices. Among them, integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response, providing access to previously inaccessible degrees of freedom. We review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces, including semiconductor lasers, semiconductor light emitting devices, semiconductor photodetectors, and low dimensional semiconductors. The integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices, while also providing a practical platform for implementing cutting-edge metasurface technology in real-world applications.