Highly efficient operation and uniform characteristics of curved mirror vertical-cavity surface-emitting lasers
Maiko Ito, Tatsushi Hamaguchi, Tomohiro Makino, Kentaro Hayashi, Jared A. Kearns, Maho Ohara, Noriko Kobayashi, Shoetsu Nagane, Kōichi Sato, Yuki Nakamura, Yukio Hoshina, Tatsurou Jyoukawa, Takumi Watanabe, Yuichiro Kikuchi, Seiji Kasahara, Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Eiji Nakayama, Rintaro Koda, Noriyuki Futagawa
Abstract
Abstract This study obtained highly uniform and efficient GaN-based vertical-cavity surface-emitting lasers with curved mirrors from a single wafer. The average threshold current ( I th ) and the optical output power ( P max ) of 14 chips measured up to 7.0 mA were 0.64 mA and 4.5 mW, respectively. The standard deviations of I th and P max were 6.7% and 5.1%, respectively. Additionally, the best chip showed maximum values of wall plug efficiency and output power of 13.4% and 7.6 mW, respectively, at 5.2 mA and 12.8 mA operating currents.