Simulation design of a high-breakdown-voltage p-GaN-gate GaN HEMT with a hybrid AlGaN buffer layer for power electronics applications
Yong Liu, Qi Yu, Jiangfeng Du
Topics & Concepts
High-electron-mobility transistorBreakdown voltageMaterials scienceOptoelectronicsTransistorFigure of meritGallium nitrideElectric fieldThreshold voltageVoltageElectrical engineeringLayer (electronics)NanotechnologyPhysicsQuantum mechanicsEngineeringGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devices