Litcius/Paper detail

Organic Interposer CoWoS-R<sup>+</sup> (plus) Technology

Mu-Shan Lin, M.S. Liu, Hsien‐Wei Chen, S.M. Chen, M.C. Yew, C.S. Chen, Shin-Puu Jeng

20222022 IEEE 72nd Electronic Components and Technology Conference (ECTC)37 citationsDOI

Abstract

Organic interposer (CoWoS-R) technology is one of the most promising heterogeneous integration platforms for high performance computing (HPC) applications. Components such as chiplets, high-bandwidth memory (HBM), and passives can be integrated into an organic interposer with excellent yield and reliability. CoWoS-R provides low RC interconnect with good signal isolation and design scalability. The new organic interposer CoWoS-R <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> (plus) successfully integrates both a large amount of high density IPD (integrated passive device) and fine pitch Si-based connection block for convenient IP migration. IPD serves as decoupling (de-cap) capacitor, which is critical to the high-speed data operations in advanced logic circuits, where stable voltage supplies are required. The distance between SOC devices and capacitors is minimized to assure fast response. The feeding resistance is greatly reduced by thick power mesh and bump via in the organic interposer. The advantages in connectivity and power integrity of new CoWoS-R <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> (plus) technology are presented.

Topics & Concepts

InterposerCapacitorPower integrityScalabilityIntegrated circuitComputer scienceDecoupling capacitorInterconnectionElectrical engineeringDecoupling (probability)Electronic engineeringMaterials scienceSignal integrityVoltageEngineeringNanotechnologyTelecommunicationsOperating systemLayer (electronics)Etching (microfabrication)Control engineering3D IC and TSV technologiesSemiconductor materials and devicesVLSI and Analog Circuit Testing