Improved electrical performance of lateral β-Ga2O3 MOSFETs utilizing slanted fin channel structure
Hongyu Liu, Jianing Li, Yuanjie Lv, Yuangang Wang, Xiaoli Lu, Shaobo Dun, Tingting Han, Hongyu Guo, Aimin Bu, Xiaohua Ma, Zhihong Feng, Yue Hao
Abstract
In this Letter, lateral slanted-fin-channel β-Ga2O3 metal-oxide-semiconductor field effect transistors (MOSFETs) are demonstrated. A 600-nm thick n-type doped channel layer is adopted to improve output characteristics. The tri-gate structure enhances gate control in the proposed β-Ga2O3 MOSFETs, showing an on/off ratio as high as 109. In particular, the slanted-fin-channel structure, mainly located in the gate region, reduces the peak electric field in the Ga2O3 channel due to the gradual regulation of a threshold voltage. The slanted-fin-channel β-Ga2O3 MOSFETs show a breakdown voltage (Vbr) of 2400 V and a power figure-of-merit of 193 MW/cm2, which are almost 2 and 5.5 times larger, respectively, than those of conventional straight-fin-channel devices. These results imply that the slanted-fin channel structure provides a viable way of fabricating high-performance β-Ga2O3 MOSFET power devices.