Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs
Thomas Aichinger, Marek E. Schmidt
Abstract
We discuss various gate-oxide reliability aspects of silicon carbide (SiC) MOSFETs and highlight similarities and differences of SiC and silicon (Si) technology. Basic concepts of electrical gate-oxide defect screening are introduced and failure probability and the failure-rate after screening is studied based on Weibull statistics. To be able to quantify very low extrinsic failure probabilities (e.g. after electrical screening), we present a new kind of test procedure which we call the "marathon stress test". The results of this test demonstrate that excellent gate-oxide reliability of commercially available SiC trench MOSFETs can be achieved after applying a sufficiently precise electrical screening.
Topics & Concepts
Reliability (semiconductor)Materials scienceReliability engineeringGate oxideReduction (mathematics)MOSFETTime-dependent gate oxide breakdownFailure rateOptoelectronicsOxideLogic gateElectronic engineeringComputer scienceElectrical engineeringEngineeringTransistorMetallurgyVoltagePhysicsMathematicsGeometryPower (physics)Quantum mechanicsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesIntegrated Circuits and Semiconductor Failure Analysis