Defect-Tolerant Sodium-Based Dopant in Charge Transport Layers for Highly Efficient and Stable Perovskite Solar Cells
Sumi Bang, Seong Sik Shin, Nam Joong Jeon, Young Yun Kim, Geunjin Kim, Tae‐Youl Yang, Jangwon Seo
Abstract
To extract charges more efficiently through charge-transporting layers (CTLs), various dopants are necessary. Lithium bis(trifluoromethanesulfonyl)imide (Li-TFSI) is the most widely used dopant in electron- and hole-transporting layers. However, Li+ ions easily migrate into the perovskite and deteriorate the device performance. To address this issue, several efforts such as introducing a buffer layer have been tried, but the issue is still not fully resolved. Thus it is required to find a simple way without additional treatments. In this work, we propose a simple strategy to use defect-tolerant dopant in CTLs, sodium bis(trifluoromethanesulfonyl)imide (Na-TFSI), to improve both the efficiency and the stability of perovskite solar cells (PSCs). The PSCs with Na-TFSI for both the electron-transport layer and the hole-transport layer show the highest power conversion efficiency up to 22.4%. In addition, the device with Na-TFSI exhibited better long-term operating stability at 45 °C, maintaining >80% of the initial performance even after 500 h of continuous 1 sun illumination.