Nonvolatile Logic‐in‐Memory Computing based on Solution‐Processed CuI Memristor
Bochang Li, Wei Wei, Li Luo, Ming Gao, Zhi Gen Yu, Sifan Li, Kah‐Wee Ang, Chunxiang Zhu
Abstract
Abstract Memristors are intensively studied as being regarded as the critical components to realize the in‐memory computing paradigm. A novel electrochemical metallization memristor based on solution‐processed Pt/CuI/Cu structure is proposed and demonstrated in this work, with a high resistance switching ratio of 1.53 × 10 7 . Owing to the efficient drift paths provided by Cu vacancies for Cu cations in CuI, very small operating voltages ( V set = 0.64 V and V reset = −0.19 V) are characterized, contributing to ultralow standby power consumption of 9 fW and per set transition of 8.73 µW. Using CuI memristor arrays, a set of Boolean logic operations and a half‐adder are implemented. Moreover, by building the model for a 75 × 48 one‐transistor‐one‐memristor array, the feasibility of hardware encryption and decryption for images is verified. All these demonstrate that solution‐processed CuI memristors possess great potential in constructing energy‐efficient logic‐in‐memory computing architectures.