Single-photon emission from isolated monolayer islands of InGaN
Xiaoxiao Sun, Ping Wang, Tao Wang, Ling Chen, Zhaoying Chen, Kang Gao, Tomoyuki Aoki, Mo Li, Jian Zhang, Tobias Schulz, M. Albrecht, Weikun Ge, Yasuhiko Arakawa, Bo Shen, Mark Holmes, Xinqiang Wang
Abstract
We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures. Detailed optical analysis of the characteristic emission spectrum from the monolayer islands is performed, and the main transmission is shown to act as a bright, stable, and fast single-photon emitter with a wavelength of ~400 nm.
Topics & Concepts
MonolayerNanopillarCommon emitterOptoelectronicsMolecular beam epitaxyMaterials scienceWavelengthPhotonFabricationTransmission (telecommunications)EpitaxyOpticsNanotechnologyPhysicsNanostructureLayer (electronics)TelecommunicationsMedicineAlternative medicinePathologyComputer scienceGaN-based semiconductor devices and materialsNanowire Synthesis and ApplicationsSemiconductor Quantum Structures and Devices