Nitrogen vacancy–acceptor complexes in gallium nitride
Mykhailo Vorobiov, D. O. Demchenko, Oleksandr Andrieiev, M. A. Reshchikov
Abstract
We used photoluminescence (PL) spectroscopy and first-principles calculations to investigate GaN doped with Mg, Be, and implanted with Ca. The PL spectra revealed distinct red emission bands (RLA, where A = Be, Mg, and Ca) with maxima between 1.68 and 1.82 eV, each associated with a specific impurity. These bands consistently appeared alongside the green GL2 PL band at 2.33 eV, attributed to nitrogen vacancy (VN). Our calculations suggest that these bands result from recombination via defect complexes of group-II acceptors substituting for Ga with VN (AGaVN, A = Be, Mg, and Ca). The experimental +/0 transition levels for these complexes were estimated to be 0.6, 0.8, and 1.0 eV above the valence band maximum for Mg-, Be-, and Ca-containing complexes, respectively. The radiative recombination is facilitated by excited donor states located close to the conduction band minimum. Furthermore, our theory predicts that ZnGaVN and CdGaVN are stable and possess similar properties, although, no PL was detected from these defect complexes. The presented findings shed light on the identity of compensating donor complexes that impede the efficiency of p-type doping in GaN.