CuSCN Modified Back Contacts for High Performance CZTSSe Solar Cells
Yixiong Ji, Xiangyun Zhao, Yining Pan, Zhenghua Su, Jinhong Lin, Eser Metin Akinoglu, Yang Xu, Heyou Zhang, Pengjun Zhao, Yue Dong, Xingzhan Wei, Fangyang Liu, Paul Mulvaney
Abstract
Abstract Optimization of the back contact interface is crucial for improving the performance of Cu 2 ZnSnS 4 (CZTS) thin film solar cells. In this paper, self‐depleted CuSCN is deployed as an intermediate layer at the Mo/CZTS interface to improve the quality of the back contact. This CuSCN layer, obtained via aqueous solution processing, reduces the thickness of Mo(S,Se) 2 and eliminates multi‐layer crystallization of the absorber by suppressing the undesirable reaction between Mo and Se during the selenization process. By regulating the selenium infiltration into the CZTS precursor films during the selenization process, highly crystalline, single‐layer Cu 2 ZnSn(S,Se) 4 (CZTSSe) absorber layers are realized. The single‐layer CZTSSe absorber exhibits reduced carrier recombination, enhanced carrier density and increased work function. The improved back contact and absorber layer enables 11.1% power‐conversion‐efficiency to be achieved.