Effect of charge storage engineering on the NO<sub>2</sub> gas sensing properties of a WO<sub>3</sub> FET-type gas sensor with a horizontal floating-gate
Wonjun Shin, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Jinwoo Park, Donghee Kim, Chayoung Lee, Byung‐Gook Park, Jong-Ho Lee
Abstract
increase by the excess holes stored in the FG by the erase operation, the sensitivity of the sensor also increases 3.2 times. The effects of CSE on various sensing performances are explained using energy band diagrams.
Topics & Concepts
Sensitivity (control systems)Materials scienceTransducerField-effect transistorOptoelectronicsTransistorCharge (physics)Analytical Chemistry (journal)Electrical engineeringChemistryPhysicsElectronic engineeringEngineeringVoltageEnvironmental chemistryQuantum mechanicsGas Sensing Nanomaterials and SensorsAnalytical Chemistry and SensorsAdvanced Chemical Sensor Technologies