High On-Current 2D nFET of 390 μA/μm at VDS = 1V using Monolayer CVD MoS2 without Intentional Doping
Ang‐Sheng Chou, Pin‐Chun Shen, Chao-Ching Cheng, Li‐Syuan Lu, Wei-Chen Chueh, Ming‐Yang Li, Gregory Pitner, Wen‐Hao Chang, Chih‐I Wu, Jing Kong, Lain‐Jong Li, H.‐S. Philip Wong
Abstract
We demonstrate the highest nFET current of 390 μA/μ m at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> = 1 V based on CVD Mos <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION/IOFF ratio of 4 × 10 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sub> , and nearly zero DIBL. The high on-current achieved in monolayer Mos <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> nFET is mainly attributed to the thin EOT ~2 nm of HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> gate oxide, short gate length of 100 nm, and low contact resistance ~1.1 kω- μm.