Substitutional p‐Type Doping in NbS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures Grown by MOCVD
Zhenyu Wang, Mukesh Tripathi, Zahra Golsanamlou, Poonam Kumari, Giuseppe Lovarelli, Fabrizio Mazziotti, Demetrio Logoteta, Gianluca Fiori, Luca Sementa, Guilherme Migliato Marega, Hyun Goo Ji, Yanfei Zhao, Aleksandra Rađenović, Giuseppe Iannaccone, Alessandro Fortunelli, András Kis
Abstract
Abstract Monolayer MoS 2 has attracted significant attention owing to its excellent performance as an n‐type semiconductor from the transition metal dichalcogenide (TMDC) family. It is however strongly desired to develop controllable synthesis methods for 2D p‐type MoS 2 , which is crucial for complementary logic applications but remains difficult. In this work, high‐quality NbS 2 –MoS 2 lateral heterostructures are synthesized by one‐step metal–organic chemical vapor deposition (MOCVD) together with monolayer MoS 2 substitutionally doped by Nb, resulting in a p‐type doped behavior. The heterojunction shows a p‐type transfer characteristic with a high on/off current ratio of ≈10 4 , exceeding previously reported values. The band structure through the NbS 2 –MoS 2 heterojunction is investigated by density functional theory (DFT) and quantum transport simulations. This work provides a scalable approach to synthesize substitutionally doped TMDC materials and provides an insight into the interface between 2D metals and semiconductors in lateral heterostructures, which is imperative for the development of next‐generation nanoelectronics and highly integrated devices.