Atomic layer deposition of dielectric Y<sub>2</sub>O<sub>3</sub> thin films from a homoleptic yttrium formamidinate precursor and water
Nils Boysen, David Zanders, Thomas Berning, Sebastian Beer, Detlef Rogalla, Claudia Bock, Anjana Devi
Abstract
In this work, the application of tris(<italic>N</italic>,<italic>N</italic>′-diisopropyl-formamidinato)yttrium(<sc>iii</sc>) [Y(DPfAMD)<sub>3</sub>] as a precursor in a water-assisted thermal atomic layer deposition (ALD) process for the fabrication of device quality Y<sub>2</sub>O<sub>3</sub> thin films is demonstrated.
Topics & Concepts
Atomic layer depositionHomolepticYttriumThin filmDielectricChemistryLayer (electronics)Deposition (geology)Atomic layer epitaxyInorganic chemistryAnalytical Chemistry (journal)MetalCrystallographyMineralogyMaterials scienceNanotechnologyOptoelectronicsOrganic chemistryBiologySedimentOxidePaleontologySemiconductor materials and devicesCatalytic Processes in Materials ScienceElectronic and Structural Properties of Oxides