Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations
Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo, Mario S. Alessandrino, Angelo Messina, Mario Saggio, Fabrizio Roccaforte
Topics & Concepts
Materials scienceSilicon carbideEngineering physicsOptoelectronicsNanotechnologyComposite materialEngineeringSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesSemiconductor materials and interfaces