Litcius/Paper detail

Vertical MoS2 transistors with sub-1-nm gate lengths

Fan Wu, He Tian, Yang Shen, Zhan Hou, Jie Ren, Guangyang Gou, Yabin Sun, Yi Yang, Tian‐Ling Ren

2022Nature625 citationsDOI

Topics & Concepts

TransistorMaterials scienceOptoelectronicsMolybdenum disulfideFabricationThin-film transistorWaferGrapheneElectronicsChemical vapor depositionNanotechnologyLayer (electronics)Electrical engineeringVoltageMetallurgyMedicineEngineeringPathologyAlternative medicine2D Materials and ApplicationsFerroelectric and Negative Capacitance DevicesGraphene research and applications
Vertical MoS2 transistors with sub-1-nm gate lengths | Litcius