Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy
Т. В. Малин, Yan Maidebura, V. G. Mansurov, Tatyana A. Gavrilova, A.K. Gutakovsky, V. I. Vdovin, Sergey Ponomarev, И. Д. Лошкарев, I. V. Osinnykh, В. А. Володин, Denis Milakhin, К. С. Журавлев
Topics & Concepts
Molecular beam epitaxyLayer (electronics)Buffer (optical fiber)Substrate (aquarium)Materials scienceSiliconOptoelectronicsEpitaxyAmmoniaComposite materialChemistryTelecommunicationsOrganic chemistryOceanographyComputer scienceGeologyGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor materials and devices