Semiconductor-nanoantenna-assisted solar absorber for ultra-broadband light trapping
Yuyin Li, Zhengqi Liu, Pingping Pan, Xiaoshan Liu, Guolan Fu, Zhongmin Liu, Haimei Luo, Guiqiang Liu, Haimei Luo, Guiqiang Liu
Abstract
Abstract Light trapping is an important performance of ultra-thin solar cells because it cannot only increase the optical absorption in the photoactive region but it also allows for the efficient absorption with very little materials. Semiconductor-nanoantenna has the ability to enhance light trapping and raise the transfer efficiency of solar energy. In this work, we present a solar absorber based on the gallium arsenide (GaAs) nanoantennas. Near-perfect light absorption (above 90%) is achieved in the wavelength which ranges from 468 to 2870 nm, showing an ultra-broadband and near-unity light trapping for the sun’s radiation. A high short-circuit current density up to 61.947 mA/cm 2 is obtained. Moreover, the solar absorber is with good structural stability and high temperature tolerance. These offer new perspectives for achieving ultra-compact efficient photovoltaic cells and thermal emitters.