Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET
K. Niskanen, H. Kettunen, Daniel Söderström, Mikko Rossi, Jukka Jaatinen, Arto Javanainen
Abstract
The effect of 53 MeV proton irradiation on the reliability of silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress was applied and early failures in time-dependent dielectric breakdown (TDDB) test were observed for irradiated devices. The applied drain voltage during irradiation affects the degradation probability observed by TDDB tests. Proton-induced single event burnouts (SEB) were observed for devices which were biased close to their maximum rated voltage. The secondary particle production as a result of primary proton interaction with the device material was simulated with the Geant4-based toolkit.
Topics & Concepts
Time-dependent gate oxide breakdownMaterials scienceSilicon carbideIrradiationMOSFETDielectric strengthProtonReliability (semiconductor)Stress (linguistics)Power MOSFETVoltageOptoelectronicsDegradation (telecommunications)DielectricElectrical engineeringGate dielectricPower (physics)Nuclear physicsTransistorPhysicsEngineeringComposite materialPhilosophyQuantum mechanicsLinguisticsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesRadiation Effects in Electronics