Tuning the magnetic properties of a <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>VSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> monolayer via the magnetic proximity effect mediated by Zeeman-type spin-orbit interaction
Mahsa Abdollahi, Meysam Bagheri Tagani
Abstract
Intrinsic room-temperature ferromagnetic ordering and inversion asymmetry of V-based transition metal dichalcogenide (TMD) monolayers with trigonal prismatic coordinates are highly desirable to develop spintronic devices. Motivated by facilitating the performance improvement of V-based TMDs in data-storage applications, we investigated the influence of the interface magnetic proximity effect, mediated by Zeeman-type spin-orbit interaction (SOI), on the magnetic exchange interaction and magnetic anisotropy of the 2H-${\mathrm{VSe}}_{2}$ monolayer. It has already been observed that strain and interlayer coupling does not have a significant effect on the magnetic anisotropy of V-based TMDs. Here we demonstrate using density functional theory (DFT) that the proximity effect of the archetypal metallic material ${\mathrm{NbSe}}_{2}$ at the van der Waals interface induces strong out-of-plane magnetic anisotropy in 2H-${\mathrm{VSe}}_{2}$. The transition of magnetization from in plane to out of plane in 2H-${\mathrm{VSe}}_{2}$ holds great promise toward the realization of faster and smaller magnetic bits in lower power-consuming memory devices such as random access memories. The valley polarization of the ${\mathrm{VSe}}_{2}$ system is significantly reversed by applying Zeeman-type SOI of ${\mathrm{NbSe}}_{2}$ substrate. Also, by combining the two-band $\mathbit{k}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbit{p}$ model with high-throughput DFT calculations, the change of $\mathbit{k}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbit{p}$ parameters of 2H-${\mathrm{VSe}}_{2}$ is examined due to Zeeman-type SOI induced by ${\mathrm{NbSe}}_{2}$.