High Current Nb-Doped P-Channel MoS₂ Field-Effect Transistor Using Pt Contact
Zichao Ma, Lining Zhang, Changjian Zhou, Mansun Chan
Abstract
This letter demonstrates unipolar p-type MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> field-effect transistors (p-FETs). The p-FETs are fabricated using high work function Pt as the contact electrode and p-type MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> film as the active channel. The p-FETs, with a channel length of 1-μ m, show an output current of -10μ A/μ m with a drain voltage of -1 V. The Pt electrode, formed by slow electron-beam evaporation, shows a contact barrier height of 0.13 eV. In comparison, a faster deposition rate results in a larger resistance and a higher contact barrier of the Pt electrode. Raman characterization provides certain support for the improved contact interface of the slowly deposited Pt electrode, which may be an essential factor in improving current drive.