A low-power memristor based on 2H–MoTe2 nanosheets with synaptic plasticity and arithmetic functions
T. Yu, Z. Zhao, Helong Jiang, Zhengjin Weng, Yuan Fang, Chao Liu, W. Lei, Suhaidi Bin Shafe, Mohd Nazim Mohtar
Topics & Concepts
MemristorNanosheetNeuromorphic engineeringVon Neumann architectureMaterials scienceExcitatory postsynaptic potentialPostsynaptic potentialLong-term potentiationPostsynaptic CurrentSpike-timing-dependent plasticityComputer scienceArtificial neural networkNanotechnologyNeuroscienceElectronic engineeringChemistryInhibitory postsynaptic potentialEngineeringBiologyBiochemistryReceptorMachine learningOperating systemAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesPhotoreceptor and optogenetics research