Single-Event Effects Response of 96- and 176-Layer 3D NAND Flash Memories
Edward P. Wilcox, Matthew B. Joplin, Melanie D. Berg
Abstract
Single-event effects testing (heavy-ion and proton) is presented for 96- and 176-layer commercially-available 3D NAND flash memory, with emphasis on SEFI detection and recovery.
Topics & Concepts
NAND gateFlash (photography)Layer (electronics)Event (particle physics)Computer scienceFlash memoryRandom access memoryComputer hardwareLogic gateMaterials scienceAlgorithmNanotechnologyPhysicsQuantum mechanicsOpticsRadiation Effects in ElectronicsAdvanced Data Storage TechnologiesSemiconductor materials and devices