Selective etching mechanism of silicon oxide against silicon by hydrogen fluoride: a density functional theory study
Romel Hidayat, Hye-Lee Kim, Khabib Khumaini, Tanzia Chowdhury, Tirta Rona Mayangsari, Byungchul Cho, Sangjoon Park, Won‐Jun Lee
Abstract
The mechanism underlying the selective etching of silicon oxide against silicon by HF vapor was elucidated by DFT calculations that showed lower activation energies for silicon oxide than for silicon.
Topics & Concepts
Hydrogen fluorideEtching (microfabrication)SiliconAnhydrousDensity functional theoryOxideHydrogenHydrofluoric acidMaterials scienceChemistrySemiconductorAnalytical Chemistry (journal)Inorganic chemistryNanotechnologyComputational chemistryLayer (electronics)OptoelectronicsOrganic chemistryZnO doping and propertiesGa2O3 and related materialsPlasma Diagnostics and Applications