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Optically tunable ultra-fast resistive switching in lead-free methyl-ammonium bismuth iodide perovskite films

Swapnadeep Poddar, Yuting Zhang, Yiyi Zhu, Qianpeng Zhang, Zhiyong Fan

2021Nanoscale33 citationsDOI

Abstract

s were also observed. Careful switching speed measurements showed the devices can operate with an ultra-fast speed of 10 ns for writing and erasing respectively. The devices responded to light illumination and the prolonged retention of the opto-electrically tuned resistance states paved the way for image memorization.

Topics & Concepts

Perovskite (structure)BismuthMaterials scienceIodideLead (geology)Switching timeAmmonium iodideOptoelectronicsInorganic chemistryChemical engineeringChemistryMetallurgyEngineeringGeomorphologyGeologyAdvanced Memory and Neural ComputingPerovskite Materials and ApplicationsTransition Metal Oxide Nanomaterials
Optically tunable ultra-fast resistive switching in lead-free methyl-ammonium bismuth iodide perovskite films | Litcius