Photodiode behavior and capacitive performance of ZnO nanoflakes synthesized by electrochemical deposition
Mehmet Yılmaz, Fatma Yıldırım, Şaki̇r Aydoğan, Adem Koçyiğit
Abstract
Abstract ZnO flake interlayers were fabricated by the electrochemical deposition technique on p-Si to obtain Au/ZnO/p-Si heterostructures for Schottky-type photodiode applications and to test the capacitive performance of the structures. ZnO flake structures were investigated by x-ray diffractometry and scanning electron microscopy measurements, and their crystalline and flake-like structures were confirmed. The Au/ZnO/p-Si heterostructures were characterized by current – voltage ( I–V ) measurements for various illumination densities of light from dark to 150 mW cm −2 . Various heterostructure parameters such as the ideality factor, barrier height, series resistance and rectifying ratio ( RR ) values were determined by I–V characteristics. The heterostructure exhibited a high RR of 6.85 × 10 3 . The detection parameters revealed 0.49 mA W −1 responsivity and 2.69 × 10 9 Jones specific detectivity values. Furthermore, capacitance – voltage ( C–V ) measurements were employed to obtain the capacitive behavior of the Au/ZnO/p-Si heterostructure at various frequencies. Based on these results, Au/ZnO/p-Si heterostructures have potential for photodiode applications.