Schottky barrier lowering due to interface states in 2D heterophase devices

Abstract

quantum transport calculations. The Schottky barriers are extracted both from the projected density of states and the transmission spectrum, and by simulating the IT-characteristic and applying the thermionic emission model. We find interface states originating from the metallic 1T' phase rather than the semiconducting 1H phase in contrast to the phenomenon of Fermi level pinning. Furthermore, we find that these interface states mediate large tunneling currents which dominates the charge transport and can lower the effective barrier to a value of only 55 meV.

Topics & Concepts