Flexible Threshold Switching Selectors with Ultrahigh Endurance Based on Halide Perovskites
Ling-Zhi Tang, Yang Huang, Chen Wang, Zhenxuan Zhao, Yiming Yang, Jiming Bian, Huaqiang Wu, Zengxing Zhang, David Wei Zhang
Abstract
Abstract Flexible electronics are essential for wearable setup. Due to the high nonlinear property, threshold switching (TS) selectors can effectively suppress interference currents and are compatible to large‐scale integration, enabling them to be promising for circuit applications. However, it is still a big challenge to develop flexible TS selectors with both high electrical performance and flexibility endurance due to the lack of suitable materials and processes. Organic–inorganic hybrid perovskites (OIHPs) show great potential in flexible TS selectors owing to fast ion migration, low‐temperature synthetic processes, and excellent mechanical flexibility. Here, the flexible TS selectors with an Ag/OIHP/indium tin oxide/polyethylene naphthalate structure are demonstrated by a low‐cost solution process. The devices exhibit ultrahigh endurance (10 10 cycles), excellent mechanical bending stability (10 4 times), as well as fast switching speed (40 ns). One‐selector one‐memristor is assembled to perform the write and read operation, clearly indicating nearly free of interference current. The working mechanism of the selectors is also carefully studied by energy dispersive spectroscopy and dynamic Monte Carlo model, showing that the high electrical performance should be ascribed to the low migration barrier of Ag in OHIP films. This work should provide a new promising approach in developing large‐scale integration of flexible high‐performance electronic devices.