Superior high temperature performance of 8 kV NiO/Ga<sub>2</sub>O<sub>3</sub>vertical heterojunction rectifiers
Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, F. Ren, S. J. Pearton
Abstract
NiO/Ga 2 O 3 heterojunction rectifiers were measured over a temperature range up to 600 K and found to exhibit a near-temperature independent breakdown voltage of >7 kV, far in excess of previous Schottky rectifier results.
Topics & Concepts
Non-blocking I/OMaterials scienceHeterojunctionAtmospheric temperature rangeSchottky diodeRectifier (neural networks)OptoelectronicsSchottky barrierRange (aeronautics)VoltageElectrical engineeringDiodeThermodynamicsComposite materialPhysicsChemistryCatalysisEngineeringArtificial neural networkComputer scienceStochastic neural networkBiochemistryRecurrent neural networkMachine learningGa2O3 and related materialsZnO doping and propertiesElectronic and Structural Properties of Oxides