Strong Interlayer Transition in Few‐Layer InSe/PdSe<sub>2</sub> van der Waals Heterostructure for Near‐Infrared Photodetection
Waqas Ahmad, Jidong Liu, Jizhou Jiang, Qiaoyan Hao, Di Wu, Yuxuan Ke, Haibo Gan, Vijay Laxmi, Zhengbiao Ouyang, Fangping Ouyang, Zhuo Wang, Liu Fei, Dianyu Qi, Wenjing Zhang
Abstract
Abstract Near infrared (NIR) photodetectors based on 2D materials are widely studied for their potential application in next generation sensing, thermal imaging, and optical communication. Construction of van der Waals (vdWs) heterostructure provides a tremendous degree of freedom to combine and extend the features of 2D materials, opening up new functionalities on photonic and optoelectronic devices. Herein, a type‐II InSe/PdSe 2 vdWs heterostructure with strong interlayer transition for NIR photodetection is demonstrated. Strong interlayer transition between InSe and PdSe 2 is predicted via density functional theory calculation and confirmed by photoluminance spectroscopy and Kelvin probe force microscopy. The heterostructure exhibits highly sensitive photodetection in NIR region up to 1650 nm. The photoresponsivity, detectivity, and external quantum efficiency at this wavelength respectively reaches up to 58.8 A W −1 , 1 × 10 10 Jones, and 4660%. The results suggest that the construction of vdWs heterostructure with strong interlayer transition is a promising strategy for infrared photodetection, and this work paves the way to developing high‐performance optoelectronic devices based on 2D vdWs heterostructures.