Fractional quantum Hall effect in CVD-grown graphene
Schmitz, M., Ouaj, T., Winter, Z., Rubi, K., Watanabe, K., Taniguchi, T., Zeitler, U., Beschoten, Bernd, Stampfer, Christoph
Abstract
Abstract We show the emergence of fractional quantum Hall states in graphene grown by chemical vapor deposition (CVD) for magnetic fields from below 3 T to 35 T where the CVD-graphene was dry-transferred. Effective composite-fermion filling factors up to ν * = 4 are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the p /3 fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.