Giant tunnelling electroresistance through 2D sliding ferroelectric materials
Jie Yang, Jie Yang, Jun Zhou, Jing Lü, Zhaochu Luo, Jinbo Yang, Jinbo Yang, Lei Shen
Abstract
first principles. It is found that the electrode/BBN contact electric field quenches the ferroelectricity in the staggered BBN, resulting in a very small tunnelling electroresistance (TER). Inserting high-mobility 2D materials between Au and BN can restore the BBN ferroelectricity, reaching a giant TER of ∼10 000% in sliding FTJs. We finally investigate the metal-contact and thickness effect on the tunnelling property of sliding FTJs. The giant TER and multiple non-volatile resistance states in vdW sliding FTJs show promising applications in voltage-controlled nano-memories with ultrahigh storage density.
Topics & Concepts
FerroelectricityMaterials scienceQuantum tunnellingElectric fieldPolarization (electrochemistry)van der Waals forceCondensed matter physicsNanotechnologyOptoelectronicsDielectricChemistryQuantum mechanicsPhysical chemistryMoleculePhysicsOrganic chemistryGraphene research and applications2D Materials and ApplicationsMolecular Junctions and Nanostructures