Atomic layer deposition and characterization of Zn-doped Ga2O3 films
Zsófia Baji, Ildikó Cora, Zsolt E. Horváth, Emil Agócs, Zoltán Szabó
Abstract
The present work focuses on the atomic layer deposition (ALD), annealing, and Zn doping of gallium oxide (Ga2O3) films using a novel Ga precursor, hexakis-dimethylamino-digallium. As ALD deposited Ga2O3 films are always amorphous, the optimal annealing procedure had to be found to achieve crystalline β-Ga2O3. The bandgaps and dielectric properties of the layers were measured and the effects of the deposition parameters and postdeposition annealing on the electrical properties were determined. The effects of Zn doping on the electrical properties were analyzed, and some crucial issues for application as a UV sensor were addressed.
Topics & Concepts
Atomic layer depositionAnnealing (glass)DopingMaterials scienceAmorphous solidGalliumDielectricThin filmChemical engineeringDeposition (geology)NanotechnologyOptoelectronicsAnalytical Chemistry (journal)MetallurgyCrystallographyChemistryChromatographyEngineeringSedimentBiologyPaleontologyGa2O3 and related materialsSemiconductor materials and devicesZnO doping and properties