Band Gap Engineering and Trap Depths of Intrinsic Point Defects in RAlO<sub>3</sub> (R = Y, La, Gd, Yb, Lu) Perovskites
Yaroslav Zhydachevskyy, Yu. Hizhnyi, S. Nedilko, Irina Kudryavtseva, Vladimir Pankratov, Vasyl Stasiv, L. Vasylechko, D. Sugak, A. Lushchik, M. Berkowski, A. Suchocki, N.I. Klyui
Abstract
) complex defect for the particular case of La substituting Y.
Topics & Concepts
Ionic radiusLuminescenceBand gapPhosphorElectronCrystallographic defectPenning trapMaterials scienceContext (archaeology)Atomic physicsElectron excitationAnalytical Chemistry (journal)ChemistryIonCrystallographyPhysicsOptoelectronicsBiologyQuantum mechanicsPaleontologyChromatographyOrganic chemistryLuminescence Properties of Advanced MaterialsPerovskite Materials and ApplicationsRadiation Detection and Scintillator Technologies