Lead-free relaxor thin films with huge energy density and low loss for high temperature applications
A. Kuršumović, Weiwei Li, Seungho Cho, P. J. Curran, Dion Tjhe, Judith L. MacManus‐Driscoll
Abstract
We report record energy storage density (>80 J cm−3) in Pb-free relaxor ferroelectrics based on Mn-doped BiFeO3–BaTiO3 thin films. Rapid interval deposition was used to impose layer-by-layer growth improving crystallinity and lowering unwanted defects concentration. The growth and Mn doping produced an order of magnitude lower leakage, with strongly reduced dielectric loss (from room temperature to >300 °C, and 100 Hz to 1 MHz), e.g. by a factor of 5 at 225 °C and 25 kHz. At room temperature (RT), the dielectric breakdown strength increased by a factor of 1.5 to >3000 kV cm−1 while the dielectric constant remained flat, at ~1000 from RT to 350 °C. The films perform better than competing materials (e.g. PZT and SrTiO3-based) while being Pb-free and while operating up to 350 °C, which SrTiO3-based systems do not. Our work gives considerable promise for high energy and power density capacitors for harsh environments.