Mn‐ and Mn/Cu‐doped PIN‐PMN‐PT piezoelectric ceramics for high‐power transducers
Beecher H. Watson, Michael J. Brova, Mark A. Fanton, Richard J. Meyer, Gary L. Messing
Abstract
Abstract The effects of acceptor doping with manganese as either MnO 2 or MnNb 2 O 6 (MnN) with CuO on the dielectric, ferroelectric, and piezoelectric properties of PIN‐PMN‐PT ceramics were investigated. The 2% MnNb 2 O 6 ‐doped PIN‐PMN‐PT (6Pb(Mn 1/3 Nb 2/3 )O 3 ‐25Pb(In 1/2 Nb 1/2 )O 3 ‐34Pb(Mg 1/3 Nb 2/3 )O 3 ‐35PbTiO 3 ) ceramics possessed hard properties such as high coercive field ( E C ) of 11.7 kV/cm, low dielectric loss (tan δ ) of 0.7%, and high electromechanical quality factor ( Q M ) of 1011. These properties were diminished in MnO 2 ‐doped ceramics because of lower oxygen vacancy defect concentration, and exaggerated grain growth resulted in >20 µm grain size. Co‐doping with 2 mol% MnNb 2 O 6 and 0.5 mol% CuO retained hardened properties such as high E C of 9.6 kV/cm, low tan δ of 0.6%, and high Q M of 1029. MnNb 2 O 6 ‐doped and MnNb 2 O 6 + Cu co‐doped ceramics display excellent figures of merit for resonance and off‐resonance applications as well as high energy conversion efficiencies which make them promising candidates for high‐power transducer elements.