A review of manufacturing technologies for silicon carbide superjunction devices
Run Tian, Chao Ma, Jing‐Min Wu, Zhiyu Guo, Xiang Yang, Zhongchao Fan
Abstract
Abstract Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off. It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect transistor devices. Numerous efforts have been conducted to employ the same concept in silicon carbide devices. These works are summarized here.
Topics & Concepts
Silicon carbideMaterials scienceEngineering physicsOptoelectronicsMOSFETTransistorSiliconElectrical engineeringBreakdown voltageCarbideSemiconductorVoltageNanotechnologyEngineeringMetallurgySilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design