Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoOX Thin Films as Hole-Selective Contacts for p-Si Solar Cells
Yuanwei Jiang, Shuangying Cao, Linfeng Lu, Guanlin Du, Yinyue Lin, Jilei Wang, Liyou Yang, Wenqing Zhu, Dongdong Li
Abstract
Abstract Owing to its large work function, MoO X has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoO X films are employed on the rear sides of p -type crystalline silicon ( p -Si) solar cells, where the optical and electronic properties of the MoO X films as well as the corresponding device performances are investigated as a function of post-annealing treatment. The MoO X film annealed at 100 °C shows the highest work function and proves the best hole selectivity based on the results of energy band simulation and contact resistivity measurements. The full rear p -Si/MoO X /Ag-contacted solar cells demonstrate the best performance with an efficiency of 19.19%, which is the result of the combined influence of MoO X ’s hole selectivity and passivation ability.