SnS <sub>2</sub> Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applications
Dong‐Ho Shin, Jun Yang, Samik Mukherjee, Amin Bahrami, Sebastian Lehmann, Noushin Nasiri, Fabian Krahl, Chi Pang, Angelika Wrzesińska‐Lashkova, Yana Vaynzof, Steve Wohlrab, Alexey Popov, Kornelius Nielsch
Abstract
Abstract SnS 2 stands out as a highly promising 2D material with significant potential for applications in the field of electronics and photovoltaic technologies. Numerous attempts have been undertaken to modulate the physical properties of SnS 2 by doping with various metal ions. Here, a series of Sb‐doped SnS 2 is deposited via atomic layer deposition (ALD) super‐cycle process and compared its crystallinity, composition, and optical properties to those of pristine SnS 2 . It is found that the increase in the concentration of Sb is accompanied by a gradual reduction in the Sn and S binding energies. The work function is increased upon Sb doping from 4.32 eV (SnS 2 ) to 4.75 eV (Sb‐doped SnS 2 with 9:1 ratio). When integrated into photodetectors, the Sb‐doped SnS 2 showed improved performance, demonstrating increased peak photoresponsivity values from 19.5 to 27.8 A W −1 at 405 nm, accompanied by an improvement in response speed. These results offer valuable insights into next‐generation optoelectronic applications based on SnS 2 .