Growth kinetics and IMCs layer analysis of SAC305 solder with the reinforcement of SiC during the isothermal aging condition
Manoj Kumar Pal, Gréta Gergely, Zoltán Gácsi
Abstract
The Sn–3.0wt.%Ag–0.5wt.%Cu(SAC305) - xSiC composite solder was prepared by powder metallurgy method with the addition of SiC ceramic reinforcement with various compositions (0, 0.5, 1, and 1.5wt.%). The IMC layer thickness of Cu3Sn and Cu6Sn5 was suppressed during 100 h aging and the minimum thickness was found for 1.0wt.% SiC addition. The SAC305-1.0wt.%SiC/Cu was then subjected to different aging conditions (413, 423, 433, and 443 K). The IMCs thickness at the Cu-solder interface was investigated by using FIB-SEM and image analysis software (ImageJ). The SiC and Ag3Sn particles were identified in the matrix's bulk area, and the growth kinetics were examined in a detailed manner in aging conditions. Diffusion coefficients and activation energies for the two mentioned IMCs were plotted as a temperature function, and the values were calculated by the Arrhenius equation.