<i>In situ</i> TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>
Sang Ho Oh, Kyungjoon Baek, Sung Kyu Son, Kyung Song, Jang Won Oh, Seung‐Joon Jeon, Won Bae Kim, Jong Hee Yoo, Kee Jeung Lee
Abstract
TEM observations revealing the nucleation, growth, and polarity-dependent migration of voids will contribute to the fundamental understanding of the failure by void formation in nanoscale GST-based PCM devices and help improving the design of reliable PCM devices.
Topics & Concepts
Void (composites)Phase-change memoryMaterials scienceElectromigrationNucleationTransmission electron microscopyNanoscopic scaleElectrodeOptoelectronicsNanotechnologyComposite materialChemistryLayer (electronics)Physical chemistryOrganic chemistryPhase-change materials and chalcogenidesChalcogenide Semiconductor Thin FilmsTransition Metal Oxide Nanomaterials