Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO<sub>x</sub> ReRAM devices
Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi, Matteo Galetta, Antonio La Porta, Bert Jan Offrein, Valeria Bragaglia
Abstract
ReRAM devices, increasing the physical understanding and providing the equations necessary for circuit simulations incorporating this technology.
Topics & Concepts
Resistive random-access memoryMaterials scienceElectrical conductorOptoelectronicsOxideMetalNanotechnologyElectrical engineeringEngineeringMetallurgyVoltageComposite materialAdvanced Memory and Neural ComputingSemiconductor materials and devicesFerroelectric and Negative Capacitance Devices