High tunneling magnetoresistance induced by symmetry and quantum interference in magnetic molecular junctions
Lin Huang, Yu‐Jia Zeng, Dan Wu, Nannan Luo, Yexin Feng, Zhi-Qiang Fan, Li‐Ming Tang, Ke‐Qiu Chen
Abstract
A higher tunneling magnetoresistance ratio is obtained in the symmetric magnetic molecular junction due to the quantum interference, and it shows stronger ability to resist the influence of electron-vibration interaction and temperature.
Topics & Concepts
MagnetoresistanceQuantum tunnellingCondensed matter physicsMaterials scienceQuantum interferenceSymmetry (geometry)QuantumElectronInterference (communication)Magnetic fieldPhysicsSuperconductivityQuantum mechanicsChannel (broadcasting)EngineeringGeometryElectrical engineeringMathematicsQuantum and electron transport phenomenaMolecular Junctions and NanostructuresAdvancements in Semiconductor Devices and Circuit Design