Correlation-driven topological phase transition in 2D valleytronic materials: a mini-review
Xiao-Shu Guo, San‐Dong Guo
Abstract
orbitals. However, for in-plane MA, the FV and nontrivial topological properties will be suppressed. For a given material, the correlation strength is fixed, but these novel electronic states and topological phase transitions can still be exhibited by strain in practice. The mini-review sheds light on the possible role of correlation effects in some special 2D valleytronic materials.
Topics & Concepts
Topological insulatorTopology (electrical circuits)Condensed matter physicsBerry connection and curvatureTopological orderElectronic correlationPhase transitionPhysicsQuantum phase transitionAtomic orbitalHall effectGeometric phaseQuantumQuantum mechanicsMagnetic fieldElectronMathematicsCombinatorics2D Materials and ApplicationsTopological Materials and PhenomenaGraphene research and applications